Spatial Carrier Confinement in Core-Shell and Multishell Nanowire Heterostructures

被引:66
|
作者
Nduwimana, A.
Musin, R. N.
Smith, A. M.
Wang, Xiao-Qian [1 ]
机构
[1] Clark Atlanta Univ, Dept Phys, Atlanta, GA 30314 USA
基金
美国国家科学基金会;
关键词
D O I
10.1021/nl8017725
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have derived an analytical effective-mass model and employed first-principles density functional theory to study the spatial confinement of carriers in core-shell and multishell structured semiconductor nanowires. The band offset effect is analyzed based on the subband charge density distributions, which is strongly dependent upon the strain relaxation. First-principles calculation results for spatially confined Si/Ge and GaN/GaP nanowires indicate accumulation of a Ge-core hole gas and a GaN-core electron gas, respectively, in agreement with experimental observations.
引用
收藏
页码:3341 / 3344
页数:4
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