64-Pixel linear-array Si-APD detector for X-ray time-resolved experiments

被引:5
|
作者
Kishimoto, S. [1 ]
Yonemura, H. [1 ]
Adachi, S. [1 ]
Shimazaki, S. [2 ]
Ikeno, M. [2 ]
Saito, M. [2 ]
Taniguchi, T. [2 ]
Tanaka, M. [2 ]
机构
[1] KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki, Japan
[2] KEK, Inst Particle & Nucl Sci, Tsukuba, Ibaraki, Japan
关键词
Silicon avalanche photodiodes; Pixel detectors; Fast-pulse processing; Synchrotron X-rays;
D O I
10.1016/j.nima.2013.06.023
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have developed a silicon avalanche-photodiocle (Si-APD) linear array detector to be used for time-resolved measurements in pulsed synchrotron X-ray experiments. The Si-APD linear array consists of 64 pixels 100 x 200 mu m(2), with a pixel pitch of 150 mu m and a depletion depth of 10 mu m. The nanosecond response and high counting rate of the Si-APD are very valuable for time-resolved X-ray diffraction experiments using pulsed synchrotron radiation. A detector system that can resolve successive X-ray pulses within a short interval of 2 ns would be very efficient for recording the intensity and position of X-ray diffraction patterns within a nanosecond period. A prototype detector system equipped with an ultrafast application-specific integrated circuit, field-programmable gate arrays and network processor boards was fabricated. It allowed a high count-rate of > 10(7) cps per channel with a synchrotron X-ray beam; however, the time resolution was limited to 10 ns. The detector successfully recorded small-angle X-ray scattering by scanning the detector position. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:53 / 56
页数:4
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