Nitrogen ion implanted InP based photo-switch

被引：5
|
作者：
Graham, Chris [1 ]
Gwilliam, Russell [2 ]
Seeds, Alwyn [1 ]
机构：
[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[2] Univ Surrey, Fac Engn & Phys Sci, Guildford GU2 7XH, Surrey, England
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 24期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1364/OE.20.026696
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping levels produces a photocarrier recombination time of a few picoseconds. The ion size and mass selected produces uniform bulk point defects in an In0.53Ga0.47As light absorbing region leading to high photocurrent mobility not exhibited in heavy ion irradiated samples resulting in a reduced peak pulse power requirement to switch the device. (C) 2012 Optical Society of America
引用
收藏
页码：26696 / 26703
页数：8
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