Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

被引：20
|
作者：
Sharma, S. [1 ,2 ]
Dash, S. P. [3 ]
Saito, H. [1 ]
Yuasa, S. [1 ]
van Wees, B. J. [2 ]
Jansen, R. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[3] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 16期
关键词：
SPINTRONICS; SILICON;
D O I：
10.1103/PhysRevB.86.165308
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The contribution of the spin accumulation to tunneling anisotropy in Si/Al2O3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.
引用
收藏
页数：11
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