Characterization of semiconductor sub-micron gratings: Is there an alternative to scanning electron microscopy?

被引：2
|
作者：
Bonard, JM
Ganiere, JD
MorierGenoud, F
Achtenhagen, M
机构：
[1] Inst. de Micro- et Optoelectronique, Département de Physique, Ecl. Polytech. Federale de Lausanne
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 03期
关键词：
D O I：
10.1088/0268-1242/11/3/021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: we use transmission electron microscopy on wedge-shaped samples oriented along a [111] zone axis. Grating parameters can be obtained with a precision of 1 nm, along with information on the shape and the regularity of the ridge profile, the surface quality as well as the local chemical composition.
引用
收藏
页码：410 / 414
页数：5
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