Phase-change materials are the basis for next-generation memory devices and reconfigurable electronics, but fundamental understanding of the unconventional kinetics of their phase transitions has been hindered by challenges in the experimental quantification. Here we obtain deeper understanding based on the temperature dependence of the crystal growth velocity of the phase-change material AgInSbTe, as derived from laser-based time-resolved reflectivity measurements. We observe a strict Arrhenius behaviour for the growth velocity over eight orders of magnitude (from similar to 10 nm s(-1) to similar to 1 m s(-1)). This can be attributed to the formation of a glass at elevated temperatures because of rapid quenching of the melt. Further, the temperature dependence of the viscosity is derived, which reveals that the supercooled liquid phase must have an extremely high fragility (>100). Finally, the new experimental evidence leads to an interpretation, which comprehensively explains existing data from various different experiments reported in literature.
机构:
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast
Gnesin I.B.
Gnesin B.A.
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Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast
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Natl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, ItalyNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Privitera, S. M. S.
Garcia, I. Lopez
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Natl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, ItalyNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Garcia, I. Lopez
Bongiorno, C.
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Natl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, ItalyNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Bongiorno, C.
Sousa, V.
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CEA LETI, MINATEC Campus,17 Ave Martyrs, F-38000 Grenoble, FranceNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Sousa, V.
Cyrille, M. C.
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CEA LETI, MINATEC Campus,17 Ave Martyrs, F-38000 Grenoble, FranceNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Cyrille, M. C.
Navarro, G.
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CEA LETI, MINATEC Campus,17 Ave Martyrs, F-38000 Grenoble, FranceNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Navarro, G.
Sabbione, C.
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CEA LETI, MINATEC Campus,17 Ave Martyrs, F-38000 Grenoble, FranceNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Sabbione, C.
Carria, E.
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STMicroelectronics, Stradale Primosole 50, I-95121 Catania, ItalyNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy
Carria, E.
Rimini, E.
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Natl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, ItalyNatl Res Council IMM CNR, Inst Microelect & Microsyst, Zona Ind Ottava Str 5, I-95121 Catania, Italy