Polymorphism in phase-change materials: melt-quenched and as-deposited amorphous structures in Ge2Sb2Te5 from density functional calculations

被引:70
|
作者
Akola, J. [1 ,2 ,3 ]
Larrucea, J. [3 ]
Jones, R. O. [1 ,4 ,5 ]
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Tampere Univ Technol, Dept Phys, FI-33101 Tampere, Finland
[3] Univ Jyvaskyla, Dept Phys, Nanosci Ctr, FI-40014 Jyvaskyla, Finland
[4] Forschungszentrum Julich, German Res Sch Simulat Studies, D-52425 Julich, Germany
[5] Rhein Westfal TH Aachen, D-52425 Julich, Germany
基金
芬兰科学院;
关键词
D O I
10.1103/PhysRevB.83.094113
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The as-deposited (AD) amorphous structure of the prototype phase change material Ge2Sb2Te5 (GST-225) has been studied by density functional calculations for a 648-atom sample generated by computer-aided deposition at 300 K. The AD sample differs from a melt-quenched (MQ) sample in essential ways: (1) Ge atoms are predominantly tetrahedrally coordinated, and (2) homopolar and Ge-Sb bonds are more common and reduce the number of ABAB squares (A = Ge, Sb; B = Te), the characteristic building blocks of the material. The first observation resolves the contradiction between measured (EXAFS) and calculated Ge-Te bond lengths, and the latter explains the very different crystallization speeds. Sb and Te have higher chemical coordination than suggested by the "8-N rule" of covalent networks (N is the number of valence electrons). The EXAFS signal calculated for AD agrees much better with experiment than that calculated for MQ.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Amorphous structure melt-quenched from defective Ge2Sb2Te5
    Zhimei Sun
    Journal of Materials Science, 2012, 47 : 7635 - 7641
  • [2] Amorphous structure melt-quenched from defective Ge2Sb2Te5
    Sun, Zhimei
    JOURNAL OF MATERIALS SCIENCE, 2012, 47 (21) : 7635 - 7641
  • [3] Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films
    Wei, JS
    Gan, FX
    THIN SOLID FILMS, 2003, 441 (1-2) : 292 - 297
  • [4] Atomic and electronic structures of amorphous Ge2Sb2Te5; melt-quenched versus ideal glasses
    Cho, E.
    Im, J.
    Park, C.
    Son, W. J.
    Kim, D. H.
    Horii, H.
    Ihm, J.
    Han, S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (20)
  • [5] Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5 memory alloy
    Krbal, M.
    Kolobov, A. V.
    Fons, P.
    Tominaga, J.
    Elliott, S. R.
    Hegedus, J.
    Uruga, T.
    PHYSICAL REVIEW B, 2011, 83 (05):
  • [6] Comparison of the Crystallization Behaviors in As-Deposited and Melt-Quenched N-Doped Ge2Sb2Te5 Thin Films
    Do, Kihoon
    Lee, Dokyu
    Bae, Jun-Hyun
    Ko, Dae-Hong
    Sohn, Hyunchul
    Cho, Mann-Ho
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (04) : H347 - H351
  • [7] Crystallization behavior of as-deposited, melt-quenched, and primed amorphous states of Ge2Sb2.3Te5 films in phase change Optical recording
    Khulbe, PK
    Wright, EM
    Hurst, T
    Mansuripur, M
    2000 OPTICAL DATA STORAGE, CONFERENCE DIGEST, 2000, : 68 - 70
  • [8] Observation of hexagonal nuclei in the once melt-quenched Ge2Sb2Te5 phase change contact dimensions
    Youm, Min Soo
    Kim, Yong Tae
    Sung, Man Young
    APPLIED PHYSICS LETTERS, 2007, 91 (08)
  • [9] Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge2Sb2Te5
    Akola, J.
    Jones, R. O.
    Kohara, S.
    Kimura, S.
    Kobayashi, K.
    Takata, M.
    Matsunaga, T.
    Kojima, R.
    Yamada, N.
    PHYSICAL REVIEW B, 2009, 80 (02):
  • [10] The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5
    Cheng, Huai-Yu
    Raoux, Simone
    Chen, Yi-Chou
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)