Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

被引：40

作者：

Akgiray, Ahmed H. ^{[1
]}

Weinreb, Sander ^{[1
]}

Leblanc, Remy ^{[2
]}

Renvoise, Michel ^{[2
]}

Frijlink, Peter ^{[2
]}

Lai, Richard ^{[3
]}

Sarkozy, Stephen ^{[3
]}

机构：

[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[2] OMMIC, F-94453 Limeil Brevannes, France

[3] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2013年 / 61卷 / 09期

关键词：

Broadband amplifiers; cryogenics; gallium-arsenide (GaAs); indium-phosphide (InP); low-noise amplifiers (LNAs); microwave amplifiers; monolithic microwave integrated circuits (MMICs); radio astronomy; IMPACT IONIZATION; TEMPERATURE; PARAMETERS;

D O I：

10.1109/TMTT.2013.2273757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, T-drain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistorswith 50-Omega generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves <10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures <20-K noise over the 6-50-GHz range with 30 mW of power.

引用

页码：3285 / 3297

页数：13

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