Metal-insulator transition induced in CaVO3 thin films

被引：31

作者：

Gu, Man ^{[1
]}

Laverock, Jude ^{[2
]}

Chen, Bo ^{[2
]}

Smith, Kevin E. ^{[2
]}

Wolf, Stuart A. ^{[1
,3
]}

Lu, Jiwei ^{[3
]}

机构：

[1] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA

[2] Boston Univ, Dept Phys, Boston, MA 02215 USA

[3] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 13期

关键词：

TRANSPORT-PROPERTIES; ELECTRONIC-STRUCTURE; MAGNETIC-PROPERTIES; PEROVSKITE; CA1-XSRXVO3; SYSTEM; LA1-XCAXVO3; DIFFRACTION; BEHAVIOR;

D O I：

10.1063/1.4798963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stoichiometric CaVO3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 mu A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (similar to 60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V4+. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798963]

引用

页数：5

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