Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

被引：2
|
作者：
Bourguiga, R [1 ]
Sik, H
Scavennec, A
机构：
[1] Fac Sci Bizerte, Zarzouna Bizerte 7021, Tunisia
[2] France Telecom, Ctr Natl Etud Telecommun, Lab Bagneux, F-92225 Bagneux, France
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1999年 / 6卷 / 03期
关键词：
D O I：
10.1051/epjap:1999187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface remains necessary to retain a high enough current gain for small emitter high-frequency devices.
引用
收藏
页码：299 / 301
页数：3
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