Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures

被引：112
|
作者：
Klaassen, EH
Petersen, K
Noworolski, JM
Logan, J
Maluf, NI
Brown, J
Storment, C
McCulley, W
Kovacs, GTA
机构：
[1] LUCAS NOVASENSOR,FREMONT,CA 94539
[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305
[3] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 52卷 / 1-3期
关键词：
silicon fusion bonding; deep reactive ion etching; high-aspect-ratio microstructures; bulk micromachining; single-crystal silicon; microelectromechanical systems;
D O I：
10.1016/0924-4247(96)80138-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New developments in deep reactive ion etching (DRIE) technology, when combined with silicon fusion bonding (SFB), make it possible, for the first time, to span nearly the entire range of microstructure thicknesses between surface and bulk micromachining, using only single-crystal silicon. The combination of these two powerful micromachining tools forms a versatile new technology for the fabrication of micromechanical devices. The two techniques are described and a process technology is presented. Some of the experimental structures and devices that have been demonstrated using this new process technology are discussed.
引用
收藏
页码：132 / 139
页数：8
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