Two-terminal Al0.1Ga0.9N/GaN based visible-blind avalanche phototransistors

被引：0
|
作者：
Ou Yanghui [1 ]
Wang Hailong [1 ]
Chen Meng [1 ]
Wang Hongxia [1 ]
Jiang Hao [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2017年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Two-terminal GaN/Al0.1Ga0.9N based avalanche phototransistors have been fabricated and characterized. The devices exhibit peak responsivity at 335 nm and optical gain of 3.6 x 10(4) at 53.5 V, providing feasibility in realizing high-sensitive visible blind detection.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT
    Yadav, Gunjan
    Jindal, Kajal
    Tomar, Monika
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 153
  • [32] Characteristics of GaN/Si(111) epitaxy grown using Al0.1Ga0.9N/AIN composite nucleation layers having different thicknesses of AIN
    Jang, SH
    Lee, SJ
    Seo, IS
    Ahn, HK
    Lee, OY
    Leem, JY
    Lee, CR
    MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 169 - 174
  • [33] MOVPE growth of high-quality Al0.1Ga0.9N on Si(111) substrates for UV-LEDs
    Saengkaew, Phannee
    Dadgar, Armin
    Blaesing, Juergen
    Bastek, Barbara
    Bertram, Frank
    Reiher, Fabian
    Hums, Christoph
    Noltemeyer, Martin
    Hempel, Thomas
    Veit, Peter
    Christen, Juergen
    Krost, Alois
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S455 - S458
  • [34] High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials
    Song, Inho
    Lee, Seung-Chul
    Shang, Xiaobo
    Ahn, Jaeyong
    Jung, Hoon-Joo
    Jeong, Chan-Uk
    Kim, Sang-Wook
    Yoon, Woojin
    Yung, Hoseop
    Kwon, O-Pil
    Oh, Joon Hak
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (14) : 11826 - 11836
  • [35] Room-temperature low-threshold surface-stimulated emission by optical pumping from Al0.1Ga0.9N/GaN double heterostructure
    Amano, Hiroshi
    Watanabe, Nobuaki
    Koide, Norikatsu
    Akasaki, Isamu
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (7 B):
  • [36] Room-temperature low-threshold surface-stimulated emission by optical pumping from Al0.1Ga0.9N/GaN double heterostructure
    Amano, Hiroshi, 1600, (32):
  • [37] Au-Free Al0.4Ga0.6N/Al0.1Ga0.9N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV
    Wu, Yinhe
    Zhang, Weihang
    Zhang, Jincheng
    Zhao, Shenglei
    Luo, Jun
    Tan, Xiaohong
    Mao, Wei
    Zhang, Chunfu
    Zhang, Yachao
    Cheng, Kai
    Liu, Zhihong
    Hao, Yue
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (09) : 4543 - 4549
  • [38] Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles
    Bugallo, Andres de Luna
    Tchernycheva, Maria
    Jacopin, Gwenole
    Rigutti, Lorenzo
    Julien, Francois Henri
    Chou, Shu-Ting
    Lin, Yuan-Ting
    Tseng, Po-Han
    Tu, Li-Wei
    NANOTECHNOLOGY, 2010, 21 (31)
  • [39] A self-powered, visible-blind ultraviolet photodetector based on n-Ga:ZnO nanorods/p-GaN heterojunction
    Yang, Lu
    Zhou, Hai
    Xue, Mengni
    Song, Zehao
    Wang, Hao
    SENSORS AND ACTUATORS A-PHYSICAL, 2017, 267 : 76 - 81
  • [40] ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE
    AMANO, H
    WATANABE, N
    KOIDE, N
    AKASAKI, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B): : L1000 - L1002
12345