Two-terminal Al0.1Ga0.9N/GaN based visible-blind avalanche phototransistors

被引：0
|
作者：
Ou Yanghui [1 ]
Wang Hailong [1 ]
Chen Meng [1 ]
Wang Hongxia [1 ]
Jiang Hao [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2017年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Two-terminal GaN/Al0.1Ga0.9N based avalanche phototransistors have been fabricated and characterized. The devices exhibit peak responsivity at 335 nm and optical gain of 3.6 x 10(4) at 53.5 V, providing feasibility in realizing high-sensitive visible blind detection.
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页数：3
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