Effect Of Zn Incorporation On The Optical Properties Of Thin Films Of Se85Te15 Glassy Alloy

被引:0
|
作者
Shukla, S. [1 ]
Kumar, S. [1 ]
机构
[1] Christ Church Coll, Dept Phys, Kanpur 208001, Uttar Pradesh, India
来源
SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷
关键词
Thin films; Chalcogenide glasses; Optical band gap; AMORPHOUS-SILICON; CONSTANTS;
D O I
10.1063/1.4791156
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous thin films of Se85-xTe15Znx (x = 4, 6 and 10) have been prepared by vacuum evaporation technique. The transmittance of as-deposited thin films was measured in the wavelength region 400-1800 nm. The optical band gap and optical constants of amorphous thin films have been studied as a function of wavelength. It has been found that the value of refractive index (n) decreases while the value of the extinction coefficient (k) increases with increasing wavelength. Also the value of optical band gap increases on incorporation of Zn in Se85-xTe15Znx system. The results are interpreted in terms of electronegativity difference of the elements involved.
引用
收藏
页码:552 / 553
页数:2
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