Investigation of FePt electrode induced influence on resistive switching characteristics of SiO2-based RRAM

To improve the resistive switching performance of RRAM devices, it is desirable to find electrodes with good ability of oxygen reservoir. In this paper, bipolar switching mode of TiN/SiO2/FePt devices is achieved by using FePt as oxygen reservoir, since O atoms will be absorbed by Fe atoms to form FeO(x)film. Therefore, the oxygen reservoir's ability can be evaluated by the molar ratio of FeO(x)in FePt film and it is found that the more molar ratio of FeO(x)the stronger oxygen reservoir's ability is obtained. Interestingly, the self-rectifying characteristics in the devices with FePt electrode is observed due to the different work functions between TiN (4.7 eV) and FePt (> 5 eV). Furthermore, the transition between self-rectifying mode and diode mode can be achieved by controlling the applied voltage, which is beneficial for 1D1R architecture. The study in this paper may offer a method for fabrication of oxide-RRAM based 3D crossbar array with good performances.