Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

被引:2
|
作者
Ding, Yinjie [1 ]
Cheng, Ran [1 ]
Koh, Shao-Ming [1 ]
Liu, Bin [1 ]
Yeo, Yee-Chia [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
基金
新加坡国家研究基金会;
关键词
FinFET; Ge2Sb2Te5 (GST); multigate FET; phase change; strain; DIAMOND-LIKE CARBON; DRAIN STRESSORS; PIEZORESISTANCE; MOBILITY;
D O I
10.1109/TED.2013.2271643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of similar to 80% and linear drain current enhancement of similar to 110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0 degrees rotated FinFETs as compared with that of the FinFETs with 45 degrees rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes.
引用
收藏
页码:2703 / 2711
页数:9
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