Phonon-Mediated Tunneling into Graphene

被引：71

作者：

Wehling, T. O. ^{[1
]}

Grigorenko, I. ^{[2
]}

Lichtenstein, A. I. ^{[1
]}

Balatsky, A. V. ^{[2
,3
]}

机构：

[1] Univ Hamburg, Inst Theoret Phys, D-20355 Hamburg, Germany

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.101.216803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent scanning tunneling spectroscopy experiments on graphene reported an unexpected gap of about +/- 60 meV around the Fermi level [V. W. Brar , Appl. Phys. Lett. 91, 122102 (2007); Y. Zhang , Nature Phys. 4, 627 (2008)]. Here we give a theoretical investigation explaining the experimentally observed spectra and confirming the phonon-mediated tunneling as the reason for the gap: We study the real space properties of the wave functions involved in the tunneling process by means of ab initio theory and present a model for the electron-phonon interaction, which couples the graphene's Dirac electrons with quasifree-electron states at the Brillouin zone center. The self-energy associated with this electron-phonon interaction is calculated, and its effects on tunneling into graphene are discussed. Good agreement of the tunneling density of states within our model and the experimental dI/dU spectra is found.

引用

页数：4

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