Electrical characteristics of a triode with an n-Si/Mo-Au double thin film n-Si (n-Si/Mo-Au/n-Si) structure

被引：0
|
作者：
Gekka, Y
Satoh, K
Nagami, K
Harayama, A
机构：
[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa 259-12, 1117, Kitakaname
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
D O I：
10.1016/S0169-4332(96)00934-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new type triode device has been fabricated. The triode has electrodes at the end of two n-Si on both sides of n-Si/Mo-Au/n-Si structure and the third electrode on hla-Au double film. The n-Si/Mo-Au/n-Si structure was made by contact of Mo and Au films forming Schottky barriers of n-Si/Mo and Au/n-Si. In the measurement results of electrical characteristics of this triode, the function of active device or transistor action was observed.
引用
收藏
页码：718 / 721
页数：4
相关论文
共 50 条
  • [31] Electrical properties of dislocation trails in n-Si
    Feklisova, O. V.
    Yakimov, E. B.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 3105 - +
  • [32] HOT-ELECTRON REDUCTION AT N-SI/AU THIN-FILM ELECTRODES
    CHEN, C
    FRESE, KW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) : 3243 - 3249
  • [33] Hot-electron transport properties of CoFe/n-Si and CoFe/Cu/n-Si junctions
    Tang, Xiao-Li
    Zhang, Huai-Wu
    Su, Hua
    Zhong, Zhi-Yong
    Jing, Yu-Lan
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (09): : 3004 - 3008
  • [34] A study on investigation of electrical properties of Au/Chlorophyll-a/n-Si/Al structure
    Kaya, F. S.
    Duman, S.
    Turgut, G.
    PHYSICA B-CONDENSED MATTER, 2023, 669
  • [35] Investigation of electrical and admittance analysis of Au/Thiophene/n-Si structure at room temperature
    Baltakesmez, Ali
    Bilkan, Cigdem
    Guzeldir, Betul
    PHYSICA B-CONDENSED MATTER, 2020, 594
  • [36] PHOTOELECTROCHEMISTRY OF N-SI/METHANOL INTERFACES
    ROSENBLUTH, ML
    LEWIS, NS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C334 - C334
  • [37] AVALANCHE MULTIPLICATION IN BULK N-SI
    DALAL, VL
    APPLIED PHYSICS LETTERS, 1969, 15 (11) : 379 - &
  • [38] On the diffusion of implanted sodium in n-Si
    Zastavnoi A.V.
    Korol’ V.M.
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2014, 8 (6) : 1174 - 1176
  • [39] Electrochemical deposition of Cu on n-Si
    Martins, LFO
    Hasenack, CM
    DAjello, PCT
    Losch, WHP
    deLima, JC
    Pasa, AA
    PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ELECTRODE PROCESSES, 1996, 96 (08): : 227 - 232
  • [40] Electrical Characterization of Au/Quercetin/n-Si Heterojunction Diode and Optical Analysis of Quercetin Thin Film
    Tombak, Ahmet
    Ozaydin, C.
    Boga, M.
    Kilicoglu, T.
    9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9), 2016, 1722
12345