Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method

被引：41
|
作者：
Deng, Zanhong [1 ,2 ]
Fang, Xiaodong [1 ,2 ]
Wu, Suzhen [1 ,2 ]
Zhao, Yiping [1 ]
Dong, Weiwei [1 ,2 ]
Shao, Jingzhen [1 ,2 ]
Wang, Shimao [1 ,2 ]
机构：
[1] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Key Lab New Thin Film Solar Cells, Hefei 230031, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 577卷
关键词：
Thin films; Sol-gel processes; Electrical transport; Optical properties; PHYSICAL-PROPERTIES; DELAFOSSITE; SEMICONDUCTOR; TEMPERATURE; FE; GROWTH; AL;
D O I：
10.1016/j.jallcom.2013.06.155
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
CuFe1-xMgxO2 (0 <= x <= 0.05) thin films were synthesized by a simple sol-gel method. The structural and optoelectronic properties of the films were studied. Single phase CuFeO2 thin films with c-axis orientation were obtained on sapphire substrates and secondary phase was not detected by XRD measurements in the studied doping range. The resistivity of the films first decreased and then increased with increasing x. The minimum resistivity was observed as 3.23 Omega cm at room temperature for the doping amount of x = 0.02. The transmittance of all the films was around 37% in the wavelength of 600 nm and three absorb edges were observed in the wavelength range of 200-1100 nm. The optical direct bandgaps of CuFeO2 were estimated to be similar to 3.38 eV, 2.04 eV and 1 eV, respectively. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：658 / 662
页数：5
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