Camera for High-Speed THz Imaging

被引：35

作者：

Zdanevicius, Justinas ^{[1
]}

Bauer, Maris ^{[2
]}

Boppel, Sebastian ^{[2
]}

Palenskis, Vilius ^{[1
]}

Lisauskas, Alvydas ^{[1
]}

Krozer, Viktor ^{[2
]}

Roskos, Hartmut G. ^{[2
]}

机构：

[1] Vilnius State Univ, Dept Radiophys, LT-10222 Vilnius, Lithuania

[2] Goethe Univ Frankfurt, Inst Phys, D-60438 Frankfurt, Germany

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2015年 / 36卷 / 10期

关键词：

Terahertz detection and imaging; Silicon CMOS circuits; Real-time imaging; FIELD-EFFECT TRANSISTORS; 2-DIMENSIONAL ELECTRONIC FLUID; TERAHERTZ RADIATION; NONRESONANT DETECTION; SILICON MOSFETS; CMOS; DETECTORS;

D O I：

10.1007/s10762-015-0169-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a 24 x 24 pixel camera capable of high-speed THz imaging in power-detection mode. Each pixel of the sensor array consists of a pair of 150-nm NMOS transistors coupled to a patch antenna with resonance at 600 GHz. The camera can operate with a speed of up to 450 frames per second where it exhibits a minimum resolvable power of 10.5 nW per pixel. For a 30-Hz frame rate, the minimum resolvable power is 1.4 nW.

引用

页码：986 / 997

页数：12

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