Peculiarities of Electron-Energy Structure of Surface Layers of Porous Silicon Formed on p-Type Substrates

被引：1

作者：

Domashevskaya, E. P. ^{[1
]}

Terekhov, V. A. ^{[1
]}

Turishchev, S. Yu. ^{[1
]}

Khoviv, D. A. ^{[1
]}

Parinova, E. V. ^{[1
]}

Skryshevskii, V. A. ^{[2
]}

Gavril'chenko, I. V. ^{[2
]}

机构：

[1] Voronezh State Univ, Voronezh 394893, Russia

[2] Shevchenko Natl Univ, UA-03680 Kiev, Ukraine

来源：

INORGANIC MATERIALS | 2012年 / 48卷 / 14期

关键词：

porous silicon; electron structure; phase composition; X-ray spectroscopy; PHASE-COMPOSITION; DEPTH;

D O I：

10.1134/S0020168512140063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic and electron structure of porous silicon surface layers were investigated by the methods of ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy. The thicknesses of the surface oxide layer and the degree of distortion of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the surface oxide layer lying on the amorphous layer, which covers the nanocrystals of porous silicon upon keeping for a year, exceeds severalfold the thickness of the natural oxidation of plates of monocrystalline silicon. The distortions of the silicon-oxygen tetrahedron-the main structural unit of silicon oxide-are accompanied by the strain of Si-O bonds and the increase in Si-O-Si bond angles.

引用

页码：1291 / 1297

页数：7

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