Tunneling in quantum Hall systems

被引：0
|
作者：
Matulis, A
Levinson, Y
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷
关键词：
Quantum Hall systems; Edge and Barrier states; Tunneling;
D O I：
10.4028/www.scientific.net/MSF.384-385.3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The exactly solvable model of the edge-state bending around a corner with weakly penetrable barrier is considered. The interplay of the edge-state penetration through the barrier and the propagation along it is discussed. The probabilities of the edge-state scattering at the corner are defined and related to the barrier state spectrum peculiarities.
引用
收藏
页码：3 / 10
页数：8
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