ITO-free laminated concept for flexible organic solar cells

被引:18
|
作者
Kaduwal, Deepak [1 ,2 ,3 ]
Zimmermann, Birger [1 ]
Wuerfel, Uli [1 ,3 ]
机构
[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany
[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany
[3] Freiburg Mat Res Ctr FMF, D-79104 Freiburg, Germany
关键词
Lamination; ITO-free; Flexible; R2R; Ag grid; INDIUM-TIN-OXIDE; PHOTOVOLTAIC DEVICES; LARGE-AREA; EFFICIENCY; FABRICATION;
D O I
10.1016/j.solmat.2013.09.024
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper, we present laminated concept for indium tin oxide (ITO)-free organic solar cells (OSC). This concept omits the need of electrode deposition on top of organic layers and thus gives freedom of choice for the electrodes and the corresponding deposition techniques to achieve the best ratio between material consumption and electrical/optical properties. Various lamination processes have already been conducted on organic solar cells, mainly hot press lamination in which the lamination is done under high pressure in preheated conditions for several minutes. Here a new concept is presented where the polyethylene terephthalate (PET) flexible foils with organic layers are laminated without the use of high pressure and/or temperature and are just passed through simple lamination rolls. This use of simple lamination rolls and elimination of high pressure and temperature during lamination makes this concept a significant step closer to roll to roll (R2R) compatible. Furthermore the transparent contact was formed by a silver (Ag) grid and highly conductive Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) to replace ITO. To our best knowledge, this is the first ITO-free laminated concept on flexible foils which additionally eliminates the use of high pressure lamination. For a laminated organic solar cell with poly(3-hexylthiophene) (P3HT): (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as photoactive layer, experimental results have shown a device efficiency of 2.5% on an active area of 1.1 cm(2) which is more than 80% of the reference device efficiency with similar device architecture on a single substrate. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:449 / 453
页数:5
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