Raman study of the topology of InAs/GaAs self-assembled quantum dots

被引：14
|
作者：
Zanelatto, G [1 ]
Pusep, YA
Moshegov, NT
Toropov, AI
Basmaji, P
Galzerani, JC
机构：
[1] Univ Fed Sao Carlos, BR-13565905 Sao Paulo, Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, Brazil
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期
关键词：
D O I：
10.1063/1.371375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained. (C) 1999 American Institute of Physics. [S0021-8979(99)02319-1].
引用
收藏
页码：4387 / 4389
页数：3
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