Resonant Raman study of the InAs/GaAs self-assembled quantum dots

被引：0
|
作者：
Zanelatto, G [1 ]
Pusep, YA [1 ]
Moshegov, NT [1 ]
Toropov, AI [1 ]
Basmaji, P [1 ]
Galzerani, JC [1 ]
机构：
[1] Univ Fed Sao Carlos, BR-13565905 Sao Carlos, SP, Brazil
来源：
ADVANCED LUMINESCENT MATERIALS AND QUANTUM CONFINEMENT | 1999年 / 99卷 / 22期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained.
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页码：181 / 185
页数：5
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