BaGa2GeX6(X=S, Se): New mid-IR nonlinear optical crystals with large band gaps

被引:91
|
作者
Lin, Xinsong [1 ]
Guo, Yifeng [1 ]
Ye, Ning [1 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
Chalcogenides; Mid-IR; Nonlinear optical crystal; PHASE-MATCHING PROPERTIES; SINGLE-CRYSTALS; PARAMETRIC GENERATION; GROWTH; AGGAS2; BAGA4SE7; ZNGEP2; DAMAGE;
D O I
10.1016/j.jssc.2012.01.043
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
New middle infrared nonlinear optical crystals of BaGa2GeX6(X=S. Se) have been synthesized. The structures of both BaGa2GeS6 and BaGa2GeSe6 were found to be isomorphous exhibiting a three-dimensional framework constructed by the parallel alignment of Ga or Ge tetrahedron groups along the c-aix. The ultraviolet transmittance spectrum indicates the short-wavelength absorption edges of BaGa2GeS6 and BaGa2GeSe6 are 380 nm and 440 nm, respectively. The IR transmittance spectrum shows that the absorption edge of the BaGa2GeS6 crystal is 13.7 mu m. Second-harmonic generation of the powder samples was measured with a 2.05 mu m laser using the Kurtz and Perry technique, which showed that BaGa2GeS6 and BaGa2GeSe6 are phase-matched materials, and their measured SHG coefficient is similar to 2.1 and similar to 3.5 times as large as the coefficient of AgGaS2, or 26.3 pm/V and 43.7 pm/V. (C) 2012 Elsevier Inc. All rights reserved.
引用
收藏
页码:172 / 177
页数:6
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