Elastic and electronic properties of the Ti5X3 (X=Si, Ge, Sn, Pb) compounds from first-principles calculations

The structural stabilities, elastic and electronic properties of Ti5X3 (X=Si, Ge, Sn, Pb) compounds with D8(8) structure have been systematically investigated within the frame work of density functional theory. With increase of atomic number of the element X. the calculated lattice constants of Ti5X3 compounds are found to increase, while stabilities of these compounds decrease because the formation enthalpies increase. Moreover, with exception of C-12, the calculated elastic constants C-ij are reduced with increase of atomic number of element X, the bulk, shear. Young's modulus and Debye temperature are also lowered, while Poisson's ratio is larger, and the ductility is slightly improved. The elastic anisotropies were further studied, especially the 3D direction dependence of these elastic modulus was visually described. The density of states and charge density distribution reveal bonding feature of Ti5X3. Especially, the X-X and Ti-X covalent bonding strength is found to decrease with increase of atomic number of element X. (C) 2012 Elsevier Inc. All rights reserved.