Polymer solar cells with electrodeposited CuSCN nanowires as new efficient hole transporting layer

被引:42
|
作者
Chappaz-Gillot, Cyril [1 ,2 ]
Berson, Solenn [1 ]
Salazar, Raul [2 ]
Lechene, Balthazar [1 ]
Aldakov, Dmitry [3 ]
Delaye, Vincent [2 ]
Guillerez, Stephane [1 ]
Ivanova, Valentina [2 ]
机构
[1] CEA, LITEN DTS, Lab Technol Modules Photovolta, F-73377 Le Bourget Du Lac, France
[2] CEA, LETI, F-38054 Grenoble, France
[3] Univ Grenoble 1, CEA, INAC SPrAM, Lab Elect Mol Organ & Hybride,CNRS,UMR 5819, F-38054 Grenoble, France
关键词
Polymer solar cells; Hole transporting layer; CuSCN nanowires; Electrodeposition; Organic photovoltaics; P-CUSCN; FILMS; ZNO; THIOCYANATE; DEPOSITION; INTERFACE;
D O I
10.1016/j.solmat.2013.08.038
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Here, we report for the first time that electrodeposited CuSCN nanowires (NWs) could be successfully used as a new hole transporting layer (HTL) in a conventional polymer solar cell (PSC) with a poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thieny1-2',1',3'-benzothiadiazole)]: [6,6]-phenyl-C-71-butyric acid methyl ester (PCDTBT:PC70BM) blend as an active layer. An efficient PSC with 5.1% power conversion efficiency for 28 mm(2) active surface area is fabricated. The performances of the PSCs prepared with electrodeposited CuSCN thin films and nanowires are compared and the obtained results clearly show that the nanostructuring of the HTL leads to an efficient hole extraction. The influence of the HTL thickness on the device performances was studied and it has been found that the thickness of the CuSCN nanowire array should not exceed the active layer thickness in order to keep high performances. An extraordinary high open circuit voltage (> 900 mV) and a fill factor about 60% were measured. It is shown that the electrodeposited CuSCN thin films and NWs could be directly used in the polymer solar cells without any subsequent annealing process, which is a crucial point for the reduction of the device costs. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:163 / 167
页数:5
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