Current injection induced terahertz emission from 4H-SiC p-n junctions

被引：9

作者：

Andrianov, A. V. ^{[1
]}

Gupta, J. P. ^{[2
]}

Kolodzey, J. ^{[2
]}

Sankin, V. I. ^{[1
]}

Zakhar'in, A. O. ^{[1
]}

Vasilyev, Yu. B. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 22期

基金：

美国国家科学基金会; 俄罗斯基础研究基金会;

关键词：

LUMINESCENCE; DONORS; STATES; 4H;

D O I：

10.1063/1.4832824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on current injection induced terahertz electroluminescence from 4H-SiC p-n junctions with operating temperature up to 270K. The emission is assigned to intracenter optical transitions in donor centers, initiated by the injection of non-equilibrium carriers into the n-doped region of a SiC p-n junction. At a pumping current of 300mA at 100K, the integrated output power was 58 mu W from the device surface with an area of 3mm(2). These results suggest that THz emitting devices can be fabricated with simple structures of SiC p-n junctions, with relatively high operating temperatures and reasonable output powers. (C) 2013 AIP Publishing LLC.

引用

页数：4

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