A numerical method for a transient quantum drift-diffusion model arising in semiconductor devices

被引：2

作者：

Shimada, Tomoko ^{[1
]}

Odanaka, Shinji ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Informat Sci & Technol, Toyonaka, Osaka 5600043, Japan

[2] Osaka Univ, Cybermedia Ctr, Toyonaka, Osaka 5600043, Japan

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 04期

关键词：

Quantum drift-diffusion model; Numerical scheme; Simulation; Partial differential equation; Free energy; Semiconductors;

D O I：

10.1007/s10825-008-0258-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a numerical method for a transient quantum drift-diffusion model arising in semiconductor devices. The discretization method is presented with emphasis on adaptive time discretization. An adaptive time step algorithm is constructed by introducing the derivative of the free energy of the system, which has an essential property to understand the carrier behavior of the time-dependent problems. The algorithm is verified with switching characteristics of one-dimensional n(+)-n-n(+) silicon diodes. It is shown that the time step is adapted to the switching characteristics. The new algorithm significantly reduces the total number of time steps.

引用

页码：485 / 493

页数：9

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