Linear Temperature Sensors in High-Voltage GaN-HEMT Power Devices

被引：0

作者：

Reiner, Richard ^{[1
]}

Waltereit, Patrick ^{[1
]}

Weiss, Beatrix ^{[1
]}

Wespel, Matthias ^{[1
]}

Meder, Dirk ^{[1
]}

Mikulla, Michael ^{[1
]}

Quay, Ruediger ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

APEC 2016 31ST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION | 2016年

关键词：

thermal; overload; thermistor; HFET; PTC; PERFORMANCE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of R-ON = 55 m Omega at a corresponding drain current I-D = 30 A and an advanced dynamic performance with a low gate charge of 20 nC.

引用

页码：2083 / 2086

页数：4

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