A model of interface defect formation in silicon wafer bonding

被引：45
|
作者：
Vincent, S. [1 ]
Radu, I. [1 ]
Landru, D. [1 ]
Letertre, F. [1 ]
Rieutord, F. [2 ]
机构：
[1] SOITEC SA, F-38926 Crolles, France
[2] CEA, INAC, SP2M, NRS, F-38054 Grenoble 9, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期
关键词：
annealing; defect states; elemental semiconductors; silicon; solubility; voids (solid); wafer bonding;
D O I：
10.1063/1.3100780
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model of the defect formation at the bonding interface upon annealing in silicon wafer bonding is proposed in this paper. It is shown that the formation of the bonding defects depends on the thickness of the silicon oxide at the bonding interface. A mechanism of thermal voids formation is suggested based on the hydrogen solubility in amorphous silicon oxide. The interface gas quantity for various thicknesses of the buried oxide is predicted and good correlation with the experimental data is obtained.
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页数：3
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