Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions

被引：2

作者：

Shktorov, P

Starikov, E

Grunzoinskis, V

Perez, S

Gonzalez, T

Reggiani, L

Varani, L

Vaissiere, JC

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[3] Univ Lecce, Dipartimento Ingn Innovaz, INFM, Natl Nanotechnol Lab, I-73100 Lecce, Italy

[4] Univ Montpellier 2, CNRS, UMR 5507, Ctr Electron & Micro Optoelectron Montpellier, F-34095 Montpellier, France

来源：

FLUCTUATION AND NOISE LETTERS | 2003年 / 3卷 / 01期

关键词：

Monte Carlo simulation; hot-carrier noise; noise upconversion;

D O I：

10.1142/S0219477503001087

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

By means of Monte Carlo simulations of carrier transport in bulk semi conductors operating under periodic large-signal regime, we show the existence of upconversion of low-frequency hot-carrier noise associated with velocity fluctuations into a high-frequency region centered around the fundamental frequency of the large-signal. It is found that the upconverted noise corresponds to long-time fluctuations of relative populations of two groups of carriers characterized by different dynamical properties in momentum space. The appearance of the upconversion process is related to kinks of the static velocity-field characteristic when the dynamics of carrier motion in momentum space undergoes drastic changes.

引用

页码：L51 / L61

页数：11

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