Design and Test of an Electric Field Sensor for the Measurement of High-Voltage Nanosecond Pulses

被引:15
|
作者
Lim, Soo Won [1 ]
Cho, Chuhyun [2 ]
Jin, Yun Sik [2 ]
Kim, Young Bae [2 ]
Roh, Youngsu [3 ]
机构
[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan
[2] Korea Electrotechnol Res Inst, Chang Won 641120, South Korea
[3] Soongsil Univ, Dept Elect Engn, Seoul 156743, South Korea
关键词
D-dot sensor; nanosecond pulse; rise time; ultrawideband (UWB);
D O I
10.1109/TPS.2013.2281052
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
D-dot sensors were designed and tested for the measurement of nanosecond high-voltage pulses. Computer simulation results showed that the I-type sensor has an acceptable response in a wide range of frequency among three types of sensors such as I, del, and T. The I-type sensor has coaxial cylinder shape, which consists of a brass inner conductor, a Teflon middle dielectric, and an aluminum outer conductor. Since I-type showed good linearity up to 1.2 GHz, we calibrated the sensor using relatively low frequencies. The attenuation ratio of the integrated signal of the D-dot sensor was calibrated against a standard high-voltage probe (Tektronix P6015, 75-MHz bandwidth). The measured attenuation ratio and standard deviation were 7.70 x 10(12) and 0.0608 x 10(12), respectively. The measured attenuation ratio was in good agreement with the calculated ratio within 7.5%. The operational characteristics of the sensor were tested by measuring nanosecond voltage pulses generated from a Blumlein pulse forming line. We measured high-voltage pulses having 300 kV, 5-ns pulsewidth, and 300-ps rise time using the designed D-dot sensor. The accuracy of the sensor enabled detection of several tens of picosecond differences in the rise time of the high-voltage pulses resulting from different gap distances in the peaking switch.
引用
收藏
页码:2946 / 2950
页数:5
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