Phonon Dephasing in Bulk and Monolayer MoS2

被引：0
|
作者：
Sun, Liuyang [1 ,2 ]
Tran, Kha [1 ,2 ]
Roesch, Sebastian [3 ]
Choi, Junho [1 ,2 ]
Priego, Eduardo [1 ,2 ]
Moody, Galan [4 ]
Chang, Yu-Ming [5 ]
Silverman, Kevin L. [4 ]
Mirin, Richard P. [4 ]
Li, Xiaoqin [1 ,2 ]
机构：
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[2] Univ Texas Austin, Ctr Complex Quantum Syst, Austin, TX 78712 USA
[3] Univ Tubingen, Dept Phys, D-72076 Tubingen, Germany
[4] NIST, Boulder, CO 80305 USA
[5] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate phonon dephasing times in MoS2 using a two-pulse coherent Raman spectroscopy method. The phonon dephasing times are 3.9 and 4.9 ps in monolayer and bulk MoS2 at room temperature.
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页数：2
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