Systematic investigation of coupling-modulated microring resonators based on interleaved p-n junctions

被引：1

作者：

Li, Xianyao ^{[1
]}

Hu, Yingtao ^{[1
]}

Xiao, Xi ^{[1
]}

Xiong, Kang ^{[1
]}

Li, Zhiyong ^{[1
]}

Li, Yuntao ^{[1
]}

Chu, Tao ^{[1
]}

Yu, Yude ^{[1
]}

Yu, Jinzhong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

PHOTONICS AND OPTOLECTRONICS MEETINGS (POEM) 2011: OPTOELECTRONIC DEVICES AND INTEGRATION | 2011年 / 8333卷

关键词：

silicon photonics; coupling modulation; CIFS; electro-optically tuning; micoring; BANDWIDTH; FREQUENCY; FILTERS;

D O I：

10.1117/12.920459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We systematically investigate the optical effects and the optical functions of coupling-modulated microring resonators (CMR) based on interleaved p-n junctions. The optical effect of coupling-induced frequency shifts (CIFS) is firstly observed experimentally. Due to the CIFS and thermal-optical effect, the resonance spacing is tuned as large as 0.182 nm (corresponding to 22.8 GHz), the extinction ratio is continuously modulated between 0 dB to as large as 35 dB.

引用

页数：6

共 50 条

[21] Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions
Jafari, Omid
Zhalehpour, Sasan
Shi, Wei
LaRochelle, Sophie
PHOTONICS RESEARCH, 2021, 9 (04) : 471 - 476
[22] InSbN based p-n junctions for infrared photodetection
Chen, X. Z.
Zhang, D. H.
Liu, W.
Wang, Y.
Li, J. H.
Wee, A. T. S.
Ramam, A.
ELECTRONICS LETTERS, 2010, 46 (11) : 787 - U83
[23] AN INVESTIGATION OF THE EFFECT OF LOW ENERGY ELECTRONS ON P-N JUNCTIONS IN GERMANIUM
SOLTAMOV, UB
GRISHIN, ES
SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (07): : 1295 - 1297
[24] Low Driving-Voltage Optical Modulator Based on Carrier Depletion in Silicon with Periodically Interleaved P-N Junctions
Li, Z. Y.
Xu, D. -X.
McKinnon, R.
Janz, S.
Schmid, J. H.
Lapointe, J.
Cheben, P.
Yu, J. Z.
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2008, : 13 - 15
[25] AN INVESTIGATION OF TUNNEL P-N JUNCTIONS IN POLYCRYSTALLINE GALLIUM ARSENIDE FILMS
LAVRENTY.LG
VILISOVA, MD
VYATKIN, AP
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (04): : 710 - &
[26] INVESTIGATION OF EXCITATION SPECTRA OF PHOTOVOLTAIC EFFECT AT P-N JUNCTIONS IN CDTE
NAUMOV, GP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1153 - +
[27] Graphene p-n junctions with nonuniform Rashba spin-orbit coupling
Rataj, Marek
Barnas, Jozef
APPLIED PHYSICS LETTERS, 2011, 99 (16)
[28] Fabrication and characterization of p-n junctions based on ZnO and CuPc
Gupta, R. K.
Yakuphanoglu, F.
Ghosh, K.
Kahol, P. K.
MICROELECTRONIC ENGINEERING, 2011, 88 (10) : 3067 - 3069
[29] EXPERIMENTAL INVESTIGATION OF BREAKDOWN IN GERMANIUM P-N JUNCTIONS IN A MICROWAVE ELECTRIC FIELD
SMIRNOVA, LA
DRYDO, IM
REZNICHE.NV
ETKIN, VS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (01): : 57 - &
[30] Investigation of p-n Junctions in the Emission Electron Microscope EF-6
Soa, E. -A.
Thiel, L.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (01): : 215 - 227

← 1 2 3 4 5 →