Effect of Active Layer Thickness on the Indium-Gallium-Zinc-Oxide TFTs

被引：0
|
作者：
Kim, Sun-Jae [1 ]
Lee, Soo-Yeon [1 ]
Kwon, Jang-Yeon [1 ]
Lee, Woo-Geun [2 ]
Yoon, Kap-Soo [2 ]
Lee, Young-Wook [2 ]
Han, Min-Koo [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Samsung Elect, Yongin 449711, South Korea
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
关键词：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
IGZO TFTs with various active-layer thicknesses were investigated. V-TH of TFT with 400 angstrom active-layer was -0.6V at R.T. and shifted 0.83 V at 230 degrees C while that of TFT with 700 angstrom active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.
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页码：767 / 769
页数：3
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