Single crystal GaN nanowires

被引：0
|
作者：
Deepak, FL
Govindaraj, A
Rao, CNR
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2001年 / 1卷 / 03期
关键词：
gallium nitride; nanowires; nanotubes; photoluminescence;
D O I：
10.1166/jnn.2001.041
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910degreesC. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles.
引用
下载
收藏
页码：303 / 308
页数：6
相关论文
共 50 条
  • [21] Ultrathin single crystal ZnS nanowires
    Zhang, Yejun
    Xu, Huarui
    Wang, Qiangbin
    CHEMICAL COMMUNICATIONS, 2010, 46 (47) : 8941 - 8943
  • [22] Single crystal ferroelectric AlScN nanowires
    Zhang, Xiaoman
    Xu, Wangwang
    Meng, W. J.
    Meng, Andrew C.
    CRYSTENGCOMM, 2024, 26 (02) : 180 - 191
  • [23] Aligned single crystal boron nanowires
    Yang, Q
    Sha, J
    Xu, J
    Ji, YJ
    Ma, XY
    Niu, JJ
    Hua, HQ
    Yang, DR
    CHEMICAL PHYSICS LETTERS, 2003, 379 (1-2) : 87 - 90
  • [24] Single GaN Nanowires for Extremely High Current Commutation
    Shugurov, Konstantin
    Mozharov, Alexey
    Sapunov, Georgiy
    Fedorov, Vladimir
    Tchernycheva, Maria
    Mukhin, Ivan
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (04):
  • [25] Microwave Schottky Diodes based on Single GaN Nanowires
    K. Yu. Shugurov
    A. M. Mozharov
    G. A. Sapunov
    V. V. Fedorov
    E. I. Moiseev
    S. A. Blokhin
    A. G. Kuzmenkov
    I. S. Mukhin
    Technical Physics Letters, 2023, 49 : S346 - S349
  • [26] Microwave Schottky Diodes based on Single GaN Nanowires
    Shugurov, K. Yu.
    Mozharov, A. M.
    Sapunov, G. A.
    Fedorov, V. V.
    Moiseev, E. I.
    Blokhin, S. A.
    Kuzmenkov, A. G.
    Mukhin, I. S.
    TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 4) : S346 - S349
  • [27] Electrical transport properties of single GaN and InN nanowires
    Chih-Yang Chang
    Gou-Chung Chi
    Wei-Ming Wang
    Li-Chyong Chen
    Kuei-Hsien Chen
    F. Ren
    S. J. Pearton
    Journal of Electronic Materials, 2006, 35 : 738 - 743
  • [28] Electrical transport properties of single GaN and InN nanowires
    Chang, CY
    Chi, GC
    Wang, WM
    Chen, LC
    Chen, KH
    Ren, F
    Pearton, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) : 738 - 743
  • [29] Polarized raman scattering from single GaN nanowires
    Livneh, Tsachi
    Zhang, Jinping
    Cheng, Guosheng
    Moskovits, Martin
    PHYSICAL REVIEW B, 2006, 74 (03)
  • [30] Unraveling the strain state of GaN down to single nanowires
    Auzelle, Thomas
    Biquard, Xavier
    Bellet-Amalric, Edith
    Fang, Zhihua
    Roussel, Herve
    Cros, Ana
    Daudin, Bruno
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (22)
12345