Single crystal GaN nanowires

被引：0
|
作者：
Deepak, FL
Govindaraj, A
Rao, CNR
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2001年 / 1卷 / 03期
关键词：
gallium nitride; nanowires; nanotubes; photoluminescence;
D O I：
10.1166/jnn.2001.041
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910degreesC. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles.
引用
收藏
页码：303 / 308
页数：6
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