Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs

被引：1
|
作者：
Huang, Po Chin [1 ]
Chang, Ching Yao [1 ]
Cheng, Osbert [2 ]
Wu, San Lein [3 ]
Chang, Shoou Jinn [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] United Microelect Corp, Cent R&D Div, Tainan 744, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 83347, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 10期
关键词：
1/F NOISE; SI; MOBILITY; MODEL;
D O I：
10.7567/JJAP.54.100301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy Delta 2 valleys and high-energy Delta 4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation. (c) 2015 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [11] Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
    Kuo, Jack J. -Y.
    Chen, William P. -N.
    Su, Pin
    PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, : 82 - 83
  • [12] Low-Frequency Noise of Submicron Graded-Channel SOI nMOSFETs at High Temperature
    Molto, A. R.
    Doria, R. T.
    de Souza, M.
    Flandre, D.
    Pavanello, M. A.
    2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
  • [13] Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs
    Talmat, R.
    Achour, H.
    Cretu, B.
    Routoure, J-M.
    Benfdila, A.
    Carin, R.
    Collaert, N.
    Mercha, A.
    Simoen, E.
    Claeys, C.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 131 - 134
  • [14] Low-frequency noise in hot-carrier degraded nMOSFETs
    Salm, Cora
    Hoekstra, Eric
    Kolhatkar, Jay S.
    Hof, Andre J.
    Wallinga, Hans
    Schmitz, Jurriaan
    MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) : 577 - 580
  • [15] Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise
    Scarpino, Mercedes
    Gupta, Somya
    Lin, Dennis
    Alian, AliReza
    Crupi, Felice
    Collaert, Nadine
    Thean, Aaron
    Simoen, Eddy
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (07) : 720 - 722
  • [16] On the Low-Frequency Noise Performance of Embedded Si:C nMOSFETs
    Simoen, E.
    Verheyen, P.
    Loo, R.
    Claeys, C.
    Machkaoutsan, V.
    Bauer, M.
    Thomas, S. G.
    ULSI PROCESS INTEGRATION 6, 2009, 25 (07): : 193 - 200
  • [17] Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
    Kuo, Jack J. -Y.
    Chen, William P. -N.
    Su, Pin
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 497 - 499
  • [18] Threading dislocation induced low frequency noise in strained-Si nMOSFETs
    Hua, WC
    Lee, MH
    Chen, PS
    Tsai, M
    Liu, CW
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 667 - 669
  • [19] Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate
    Lin, H. Y.
    Wu, S. L.
    Chang, S. J.
    Wang, Y. P.
    Kuo, C. W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (10)
  • [20] Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique
    Huang, Po Chin
    Wu, San Lein
    Chang, Shoou Jinn
    Kuo, Cheng Wen
    Chang, Ching Yao
    Huang, Yao Tsung
    Cheng, Yao Chin
    Cheng, Osbert
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 835 - 837
12345