Tunable Electronic Properties of Two-Dimensional Transition Metal Dichalcogenide Alloys: A First-Principles Prediction

被引:103
|
作者
Xi, Jinyang [1 ]
Zhao, Tianqi [1 ]
Wang, Dong [1 ]
Shuai, Zhigang [1 ,2 ]
机构
[1] Tsinghua Univ, Dept Chem, MOEKey Lab Organ OptoElect & Mol Engn, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Chem, BNLMS, Key Lab Organ Solids, Beijing 100190, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
MONOLAYER MOS2; LARGE-AREA; BAND-GAP; LAYERS; PHOTOLUMINESCENCE; CHEMISTRY; MOBILITY; GROWTH;
D O I
10.1021/jz402375s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigated the composition-dependent electronic properties of two-dimensional transition-metal dichalcogenide alloys (WxMo1-xS2) based on first-principles calculations by applying the supercell method and effective band structure approximation. It was found that hole effective mass decreases linearly with increasing W composition, and electron effective mass of alloys is always larger than that of their binary constituents. The different behaviors of electrons and holes in alloys are attributed to the fact that metal d-orbitals have different contributions to conduction bands of MoS2 and WS2 but almost identical contributions to valence bands. We examined the conduction polarity of WxMo1-xS2 monolayer alloys with four metal electrode materials (Au, Ag Cu, and Pd). It suggests the main carrier type for transport in transistors could change from electrons to holes as W composition increases if high work function metal contacts were used. The tunable electronic properties of two-dimensional transition-metal dichalcogenide alloys make them attractive for electronic and optoelectronic applications.
引用
收藏
页码:285 / 291
页数:7
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