Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

被引：3
|
作者：
Maksimov, O.
Zhou, X.
Tamargo, M. C.
Samarth, N.
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] CUNY, Dept Chem, New York, NY 10031 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期
基金：
美国国家科学基金会;
关键词：
Hanle effect; spin relaxation; CdSe; quantum dots;
D O I：
10.1016/j.physe.2005.12.079
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03Zn0.97Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35ns) at 4.2K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe/Be0.03Zn0.97Se QDs. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：399 / 402
页数：4
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