MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

被引：6

作者：

E, Yanxiong ^{[1
]}

Hao, Zhibiao ^{[1
]}

Yu, Jiadong ^{[1
]}

Wu, Chao ^{[1
]}

Liu, Runze ^{[1
]}

Wang, Liu ^{[1
]}

Xiong, Bing ^{[1
]}

Wang, Jian ^{[1
]}

Han, Yanjun ^{[1
]}

Sun, Changzheng ^{[1
]}

Luo, Yi ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

基金：

中国国家自然科学基金;

关键词：

AlN nanowires; Nucleation; Crystal polarity; Molecular beam epitaxy; GAN NANOWIRES; NITRIDE; INTERFACE;

D O I：

10.1186/s11671-015-1083-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

引用

页数：7

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