Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz

被引：15

作者：

Deng, Marina ^{[1
]}

Quemerais, Thomas ^{[2
]}

Bouvot, Simon ^{[1
,2
]}

Gloria, Daniel ^{[2
]}

Chevalier, Pascal ^{[2
]}

Lepilliet, Sylvie ^{[1
]}

Danneville, Francois ^{[1
]}

Dambrine, Gilles ^{[1
]}

机构：

[1] Univ Lille, IEMN UMR CNRS 8520, Ave Poincare,CS60069, F-59652 Villeneuve Dascq, France

[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

来源：

SOLID-STATE ELECTRONICS | 2017年 / 129卷

关键词：

Device characterization; G-band; H-band; Heterojunction bipolar transistors (HBTs); Silicon-Germanium (SiGe);

D O I：

10.1016/j.sse.2016.11.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a small-signal characterization work on a recently developed 55 nm SiGe BiCMOS technology from STMicroelectronics. The SiGe HBT from a prototype BiCMOS 55 nm process was investigated up to 325 GHz. The full S-parameters from DC to 325 GHz under multiple bias conditions are presented for the first time for a SiGe HBT. A usual and simple approach for the off-wafer calibration associated to an on-wafer de-embedding procedure was used and remained valid up to 325 GHz thanks to a size reduction of the test structures. The extracted 300/325 GHz f(T)f(MAX) couple, reached at 14 mA/mu m(2) collector density and 1.2 V collector-emitter voltage, was validated up to 325 GHz. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：150 / 156

页数：7

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