Spin-Transfer Torque Switching at Ultra Low Current Densities

被引：13

作者：

Leutenantsmeyer, Johannes Christian ^{[1
,2
]}

Zbarsky, Vladyslav ^{[1
,2
]}

von der Ehe, Marvin

Wittrock, Steffen ^{[1
]}

Peretzki, Patrick ^{[3
,4
]}

Schuhmann, Henning ^{[3
,4
]}

Thomas, Andy ^{[5
]}

Rott, Karsten ^{[5
]}

Reiss, Guneter ^{[5
]}

Kim, Tae Hee ^{[6
]}

Seibt, Michael ^{[3
,4
]}

Muenzenberg, Markus ^{[2
]}

机构：

[1] Univ Gottingen, Inst Phys, D-37077 Gottingen, Germany

[2] Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17489 Greifswald, Germany

[3] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

[4] Univ Gottingen, CRC 1073, D-37077 Gottingen, Germany

[5] Univ Bielefeld, Ctr Spinelect Mat & Devices, D-33615 Bielefeld, Germany

[6] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

来源：

MATERIALS TRANSACTIONS | 2015年 / 56卷 / 09期

关键词：

spintransport; spin-transfer torque; current induced switching; magnetic tunnel junctions; perpendicular anisotropy; Neel-Brown law; MAGNETIC TUNNEL-JUNCTIONS; ANISOTROPY;

D O I：

10.2320/matertrans.MA201570

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed.

引用

页码：1323 / 1326

页数：4

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