Linear electro-optic photoreflectance spectra of GaAs and CdTe around E1 and E1+Δ1

被引：0
|
作者：
Lastras-Martínez, A [1 ]
Balderas-Navarro, RE
Cantú-Alejandro, P
Lastras-Martínez, LF
机构：
[1] Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi 78000, Mexico
[2] Univ Autonoma San Luis Potosi, Fac Ciencias, San Luis Potosi 78000, Mexico
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 175卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199909)175:1<45::AID-PSSA45>3.0.CO;2-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the measurement of linear electro-optic (LEG) photoreflectance (PR) spectra for both GaAs and CdTe (001) crystals. It is found that the amplitude of the LEO spectra is directly related to the sample doping level, while the sign of these spectra is dependent on the conductivity type of the sample. GaAs LEO spectral lineshapes, in contrast, are found to be independent of the conductivity type in the 10(15) to 10(17) cm(-3) impurity range. These facts, along with a precise theoretical understanding of the LEO spectra, allow for the use of LEG-PR spectroscopy for the characterization of surface and interface electric fields.
引用
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页码：45 / 50
页数：6
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