A 1200 V, 60 A SiC MOSFET Multi-Chip Phase-Leg Module for High-Temperature, High-Frequency Applications

被引:0
|
作者
Chen, Zheng [1 ]
Yao, Yiying [2 ]
Boroyevich, Dushan [1 ]
Ngo, Khai [1 ]
Mattavelli, Paolo [1 ]
Rajashekara, Kaushik [3 ,4 ]
机构
[1] Virginia Polytech Inst & State Univ, CPES, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
[2] Virginia Polytech Inst & State Univ, CPES, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
[3] Univ Texas Dallas, Dept Elect Engn, Dallas, TX 75080 USA
[4] Rolls Royce Corp, Indianapolis, IN USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and test results of a 1200 V, 60 A multi-chip phase-leg module based on SiC MOSFETs. The module will be used in a high-frequency (70 kHz) AC-DC converter, and in high-temperature (200 degrees C) environment, for aircraft applications. Towards this target, the high-temperature characteristics of the SiC MOSFETs are firstly evaluated. The results show the superiority of SiC MOSFETs in both static and switching performances compared to Si devices. Different high-temperature packaging materials are then surveyed and carefully selected for the module to sustain the harsh environment. An improved substrate layout is also proposed based on the "switch pair" concept in order to reduce the parasitic ringing during switching transients. The concept is validated through the comparison with a regular layout design in both stray inductance analysis and time-domain simulation. Finally, the static and switching performances of the fabricated module are presented.
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页码:608 / 615
页数:8
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