Controlled Interaction of Surface Quantum-Well Electronic States

被引:42
|
作者
Seufert, Knud [1 ]
Auwaerter, Willi [1 ,2 ]
Garcia de Abajo, F. J. [3 ,4 ]
Ecija, David [1 ]
Vijayaraghavan, Saranyan [1 ]
Joshi, Sushobhan [1 ]
Barth, Johannes V. [1 ]
机构
[1] Tech Univ Munich, Phys Dept E20, D-85748 Garching, Germany
[2] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany
[3] ICFO Inst Ciencies Foton, Barcelona 08860, Spain
[4] ICREA, Barcelona, Spain
关键词
Surface state; quantum dot; electron confinement; porphyrin; scanning tunneling microscopy (STM); scanning tunneling spectroscopy (STS); CONFINEMENT; CORRALS; CHAINS; AG(111); DOTS; ATOM;
D O I
10.1021/nl403459m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the construction of well-defined surface quantum well arrangements by combining self-assembly protocols and molecular manipulation procedures. After the controlled removal of individual porphyrin molecules from dense-packed arrays on Ag(111), the surface state electrons are confined at the bare silver patches. These act as quantum wells that show well-defined unoccupied bound surface states. Scanning tunneling spectroscopy and complementary boundary element method calculations are performed to characterize the interaction between the bound states of adjacent quantum wells and reveal a hybridization of Wave functions resulting in bonding and antibonding states. The interwell coupling can be tuned by the deliberate choice of the molecules acting as potential barriers. The fabrication method is shown to be ideally suited to engineer specific configurations as one-dimensional chains or two-dimensional artificial molecules.
引用
收藏
页码:6130 / 6135
页数:6
相关论文
共 50 条
  • [31] Formation of Surface and Quantum-Well States in Ultra Thin Pt Films on the Au(111) Surface
    Silkin, Igor V.
    Koroteev, Yury M.
    Echenique, Pedro M.
    Chulkov, Evgueni V.
    MATERIALS, 2017, 10 (12):
  • [32] NONLINEAR GAIN EFFECTS IN QUANTUM-WELL, QUANTUM-WELL WIRE, AND QUANTUM-WELL BOX LASERS
    TAKAHASHI, T
    ARAKAWA, Y
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1824 - 1829
  • [33] QUANTUM-WELL SURFACE-PLASMON OSCILLATOR
    PALMER, AJ
    APPLIED PHYSICS LETTERS, 1987, 50 (09) : 537 - 539
  • [34] ELECTRONIC-STRUCTURE OF ULTRASMALL QUANTUM-WELL BOXES
    BRYANT, GW
    PHYSICAL REVIEW LETTERS, 1987, 59 (10) : 1140 - 1143
  • [35] InSb quantum-well structures for electronic device applications
    Edirisooriya, M.
    Mishima, T. D.
    Gaspe, C. K.
    Bottoms, K.
    Hauenstein, R. J.
    Santos, M. B.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1972 - 1975
  • [36] A quantum-well state at the Pd(110) surface
    Hwang, C
    Kim, CY
    Kim, ST
    Lee, KP
    Onellion, M
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (45) : L697 - L702
  • [37] Ultrafast control of electronic motion in quantum-well structures
    Matos-Abiague, A
    Berakdar, J
    APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2346 - 2348
  • [38] ELECTRONIC-ENERGY LEVELS OF QUANTUM-WELL WIRES
    SANCHEZDEHESA, J
    PORTO, JA
    AGULLORUEDA, F
    MESEGUER, F
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 5027 - 5031
  • [39] Low-energy plasmons in quantum-well and surface states of metallic thin films
    Silkin, V. M.
    Nagao, T.
    Despoja, V.
    Echeverry, J. P.
    Eremeev, S. V.
    Chulkov, E. V.
    Echenique, P. M.
    PHYSICAL REVIEW B, 2011, 84 (16):
  • [40] Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
    Hetterich, M
    Dawson, MD
    Egorov, AY
    Bernklau, D
    Riechert, H
    APPLIED PHYSICS LETTERS, 2000, 76 (08) : 1030 - 1032