Ge/Si quantum dots thin film solar cells

被引：19

作者：

Liu, Zhi ^{[1
]}

Zhou, Tianwei ^{[1
]}

Li, Leliang ^{[1
]}

Zuo, Yuhua ^{[1
]}

He, Chao ^{[1
]}

Li, Chuanbo ^{[1
]}

Xue, Chunlai ^{[1
]}

Cheng, Buwen ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

基金：

中国国家自然科学基金;

关键词：

ENHANCED PHOTOLUMINESCENCE; GE ISLANDS; TEMPERATURE; EFFICIENCY; GAP;

D O I：

10.1063/1.4818999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film p-i-n solar cells (SCs) with 30 bilayers undoped or p-type self-assembled Ge/Si quantum dots (QDs) were fabricated on n(+)-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. Compared with the SCs without Ge QDs, the external quantum efficiency in infrared region and the short-circuit current densities of the SCs with Ge QDs increased. However, their open-circuit voltages and efficiencies decreased. The open circuit voltages of p-type Ge/Si QDs SCs recovered significantly at low temperature, which was due to the suppression of recombination centers and longer carrier lifetime. (C) 2013 AIP Publishing LLC.

引用

页数：4

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