Lattice-matched InGaAs on InP thermophovoltaic cells

被引：19

作者：

Tuley, R. S. ^{[1
]}

Orr, J. M. S. ^{[1
]}

Nicholas, R. J. ^{[1
]}

Rogers, D. C. ^{[2
]}

Cannard, P. J. ^{[2
]}

Dosanjh, S. ^{[2
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] Ctr Integrated Photon, Martlesham Heath IP5 3RE, Suffolk, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

RECOMBINATION; EFFICIENCY; CAPTURE; DEVICES;

D O I：

10.1088/0268-1242/28/1/015013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and characterization of lattice matched single junction InGaAs thermophotovoltaic cells grown on InP substrates with an EQE >90% over a broad spectral range. The I-V characteristics of the cells are examined for a range of operating temperatures and illumination conditions. An accurate model of the cell performance, including the flat-spot behaviour exhibited by the cells, is developed using the commercial PC1D package. We use this model to estimate the output of these cells with an example low-cost spectral control system, which suggest that these cells would produce system efficiencies >10%, with the potential for efficiencies >20%.

引用

页数：7

共 50 条

[31] Bandgap Engineering and Short-Wavelength Infrared Detection of InGaAs/GaAsSb Superlattices Lattice-Matched to InP
Armando Gil
Jamie Phillips
Martin H. Ettenberg
Nuha A. Babikir
Journal of Electronic Materials, 2022, 51 : 4703 - 4713
[32] Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP HEMTs.
Dimoulas, A
Davidow, J
Giapis, KP
Georgakilas, A
Halkias, G
Kornelios, N
DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 301 - 306
[33] MOLECULAR-BEAM EPITAXIAL-GROWTH AND THERMODYNAMIC ANALYSIS OF INGAAS AND INALAS LATTICE-MATCHED TO INP
MCELHINNEY, M
STANLEY, CR
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 518 - 522
[34] Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots
Ulloa, J. M.
Koenraad, P. M.
Bonnet-Eymard, M.
Letoublon, A.
Bertru, N.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[35] Feedback control of substrate temperature and film composition during MBE growth of lattice-matched InGaAs on InP
Roth, JA
Dubray, JJ
Chow, DH
Brewer, PD
Olson, GL
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 253 - 256
[36] Bandgap Engineering and Short-Wavelength Infrared Detection of InGaAs/GaAsSb Superlattices Lattice-Matched to InP
Gil, Armando
Phillips, Jamie
Ettenberg, Martin H.
Babikir, Nuha A.
JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (09) : 4703 - 4713
[37] On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
Menozzi, R
Borgarino, M
Baeyens, Y
VanHove, M
Fantini, F
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (01): : 3 - 5
[38] A comparison of lattice-matched GaInNAs and metamorphic InGaAs photodetector devices
Jackrel, DB
Yuen, HB
Bank, SR
Wistey, MA
Yu, XJ
Fu, JX
Rao, ZL
Harris, JS
SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES, 2005, 864 : 271 - 276
[39] Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT
Huang Jie
Guo Tianyi
Zhang Haiying
Xu Jingbo
Fu Xiaojun
Yang Hao
Niu Jiebin
JOURNAL OF SEMICONDUCTORS, 2010, 31 (09)
[40] Quantum cascade laser utilising aluminium-free material system: InGaAs/GaAsSb lattice-matched to InP
Nobile, M.
Klang, P.
Mujagic, E.
Detz, H.
Andrews, A. M.
Schrenk, W.
Strasser, G.
ELECTRONICS LETTERS, 2009, 45 (20) : 1031 - 1032

← 1 2 3 4 5 →